TMCNet:  Applied Materials introduces new Applied Varian VIISta Trident system

[June 21, 2012]

Applied Materials introduces new Applied Varian VIISta Trident system

Jun 21, 2012 (Datamonitor via COMTEX) -- Applied Materials, Inc., a supplier of manufacturing solutions for the semiconductor, display and solar industries, has introduced new Applied Varian VIISta Trident system, a single-wafer high-current ion implantation solution.


Used to engineer the electrical characteristics of the chip by embedding 'dopant' atoms, the new VIISta Trident system is the only ion implanter proven to achieve the yields necessary for manufacturing high-performance, power-efficient logic chips at the 20nm node, the company said.

At the 20nm node, optimizing dopant activation and suppressing defects in the extension, source/drain junction and contact regions become significant challenges that impede the scaling of high performance transistors. The capability of the VIISta Trident system to tailor dopant concentration and depth profile is critical to optimizing performance, controlling leakage current and reducing variability in advanced devices.

"A typical advanced logic chip requires as many as 60 implant steps, including co-implant and precision materials modification applications many of which are critical to device performance. The precision of our VIISta Trident technology is vital to helping our customers achieve profitable yields on their leading-edge designs," said Bob Halliday, vice president and general manager of Applied's Varian business unit.

"This benchmark performance strengthens Applied's leadership position in providing our customers with leading-edge transistor fabrication solutions. All major foundries fabricating 20nm chips today are using our VIISta Trident systems as tool of record." Key to the performance of the Trident system is its dual-magnet ribbon beam architecture for enhanced low energy performance. The system's Energy Purity Module virtually eliminates damaging, high-energy species that can 'smear' the critical transistor channel and lead to increased current leakage and degraded performance, the company added.

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