Research and Markets: Global and Chinese Power Device Industry Report, 2011-2012
(M2 PressWIRE Via Acquire Media NewsEdge) Dublin - Research and Markets (http://www.researchandmarkets.com/research/79khgj/global_and) has announced the addition of the "Global and Chinese Power Device Industry Report, 2011-2012" report to their offering.
The power device is composed of power IC, power module, and power discrete. The power discrete mainly consists of MOSFET, Diode and IGBT. SiC and GaN, the spotlight in the power device industry, have attracted a great many of venture capital institutions to tap into the market. Compared to silicon semiconductor, the SiC and GaN technologies have more distinct competitive edges.
Thus far, GaN has more distinctive advantages over SiC in terms of optimum operating voltage and optimum operating power. The application of SiC is limited in PFC (Power Factor Correction), smart grid, railcar, offshore wind power, PV and industrial driving field. While in HEV, EV and PHEV markets, SiC is less competitive than GaN. HEV is currently the mainstream in the market and is monopolized by Toyota, which tends to employ GaN instead of SiC. It is very sure that IGBT will remain to hold a dominant position before 2015.
Key Topics Covered:
1. Power Device Market
2. Power Semiconductor Market and Industry
2.2.1. Wind Power Market
2.2.2.HEV,PHEV and EV Markets
2.2.3 China Rail Transit Market
2.5.2. GaN Power Semiconductor Market
2.5.3. VC in the GaN Field
2.6. Power Device Industry
3. Power Electronics Companies
- Fuji Electric
- Mitsubishi Electric
- Nihon Inter
For more information, including full table of contents, please visit http://www.researchandmarkets.com/research/79khgj/global_and
Research and Markets,
Fax from USA: 646-607-1907
Fax from rest of the world: +353-1-481-1716
Sector: Power (http://www.researchandmarkets.com/categories.asp cat_id=47&campaign_id=79khgj)
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